Toshiba Announces 16-Gigabit Multi-Level Cell NAND Flash Component Using

70-Nanometer Process Technology

Highest Density Commercially Available MLC NAND Flash Component Provides

2-Gigabyte Data Storage Capacity

See TAEC Memory Products at CES in Toshiba Booths #12814 and #12827 in LVCC

Central Hall

LAS VEGAS, Jan. 5 /PRNewswire/ -- Continuing its commitment to a
leading-edge NAND flash roadmap to enable increasingly high density
devices for consumer applications, Toshiba America Electronic
Components, Inc. (TAEC)* today announced the availability of a
16-gigabit(1) (Gb) multi-level cell (MLC) NAND flash memory component
developed by Toshiba Corp. (Toshiba). The new 16Gb NAND Flash part,
designated TH58NVG4D4CTG, achieves 2 gigabytes(2) (GB) of storage in a
single thin, small-outline package (TSOP) by stacking two 70nm Toshiba
8Gb MLC NAND chips. The new part is ideal for solid-state file storage
applications including audio players, USB drives, memory cards,
streaming audio/video equipment and other applications requiring
high-density embedded memory at an attractive cost per bit.

"Our 16Gb NAND TSOP is based on the Toshiba 8Gb MLC NAND part which
features the industry's highest density in a single die NAND chip,
which is achieved by storing 2 bits per cell. As a result, Toshiba is
able to offer two-gigabyte storage capacity by stacking only 2 die in
a TSOP package," said Brian Kumagai, business development manager,
NAND Flash, for TAEC.

The new 16Gb memory part is based on the Toshiba TC58NVG3D4CTG 8Gb MLC
NAND, which maximizes performance by using fast writing circuit
techniques to reduce data write times and supporting a fast write
speed of 6-megabytes (MB) per second(3). The 8Gb NAND chips,
co-developed by Toshiba and SanDisk Corp, are now in full production
on 70nm production lines in an advanced wafer fabrication facility at
Toshiba Yokkaichi Works run by Flash Partners, Inc., a joint venture
of Toshiba and SanDisk.

The new parts are offered in Lead(Pb)-Free(4) surface mount packages
with tin-silver (Sn-Ag) or tin-copper (Sn-Cu) Lead(Pb)-Free plating
and are intended to be compatible(5) with the requirements of the
European Union's Restriction of Hazardous Substances (RoHS)
Directive(6), which will take effect in July 2006.

Product Specifications

Part Number TH58NVG4D4CTG

Configuration 2028M x 8 bits (16Gb)

Power Supply VCC = 2.7V to 3.6V

Page Size 2112 bytes

Max. Programming Speed 6MB/Second

Package 48-pin TSOP Type 1

Measures 12 x 20 x 1.2 millimeters

Pricing and Availability

Samples of the 16Gb Toshiba TH58NVG4D4CTG, 16Gb NAND Flash will be
available in January 2006, priced at $79.00 each.

NAND Flash Background

As a recognized pioneer in flash technology, Toshiba was a principal
innovator of NAND- and NOR-type Flash technology in the 1980's.
Toshiba maintains leadership in Flash technology today, with a
complete line of NAND memory in densities from 64megabits(7) (Mb) to
16Gb to meet various application requirements. NAND Flash has become
one of the leading technologies for solid state storage applications
because of its high-speed programming capability, high-speed erasing,
and low cost. The sequential nature (serial access) of NAND-based
Flash memory provides notable advantages for these block-oriented data
storage applications. Toshiba's NAND Flash memory products are
optimized for general solid state storage, image file storage and
audio for applications such as solid state disk drives, digital
cameras, audio appliances, set-top boxes and industrial storage.

*About TAEC

Combining quality and flexibility with design engineering expertise,
TAEC brings a breadth of advanced, next-generation technologies to its
customers. This broad offering includes memory and flash memory-based
storage solutions, a broad range of discrete devices, displays,
medical tubes, ASICs, custom SOCs, microprocessors, microcontrollers
and wireless components for the computing, wireless, networking,
automotive and digital consumer markets. TAEC is an independent
operating company owned by Toshiba America, Inc., a subsidiary of
Toshiba Corp. (Toshiba), Japan's second largest semiconductor
manufacturer and the world's ninth largest integrated manufacturer of
electric and electronic equipment. In almost 130 years of operation,
Toshiba has recorded numerous firsts and made many valuable
contributions to technology and society. For additional company and
product information, please visit TAEC's website at chips.toshiba.com.
For technical inquiries, please e-mail
Tech.Questions@taec.toshiba.com.

Information in this press release, including product pricing and
specifications, content of services and contact information, is
current and believed to be accurate on the date of the announcement,
but is subject to change without prior notice. Technical and
application information contained here is subject to the most recent
applicable Toshiba product specifications. In developing designs,
please ensure that Toshiba products are used within specified
operating ranges as set forth in the most recent Toshiba product
specifications and the information set forth in Toshiba's "Handling
Guide for Semiconductor Devices," or "Toshiba Semiconductor
Reliability Handbook." This information is available at
www.chips.toshiba.com, or from your TAEC representative.

All trademarks and tradenames held within are the properties of their
respective holders.

(1) When used herein in relation to memory density, gigabit and/or Gb

means 1,024x1,024x1,024 = 1,073,741,824 bits. Usable capacity may be

less. For details, please refer to specifications.

(2) When used herein in relation to memory density, gigabyte and/or GB

means 1,024x1,024x1,024 = 1,073,741,824 bytes. Usable capacity may be

less. For details, please refer to specifications.

(3) Read and write speed may vary depending on the read and write

conditions, such as devices you use and file sizes you read and/or

write. (For purposes of measuring write speed in this context,

1 MB = 1,000,000 bytes).

(4) Toshiba defines "Lead(Pb)-Free" in accordance with current industry

standards as no more than 0.1 percent lead(Pb) by weight in homogenous

materials. This does not mean that Toshiba products that are labeled

"Lead(Pb)-Free" are entirely free of lead(Pb).

(5) Toshiba Semiconductor Company defines "RoHS-Compatible" semiconductor

products as products that either (i) contain no more than a maximum

concentration value of 0.1% by weight in homogeneous materials for

lead, mercury, hexavalent chromium, polybrominated biphenyls (PBBs)

and polybrominated diphenyl ethers (PBDEs) and no more than 0.01% by

weight in homogenous materials for cadmium; or (ii) fall within one of

the stated exemptions set forth in the Annex to the RoHS Directive.

(6) Toshiba Semiconductor Company defines the "RoHS Directive" as the

Directive 2002/95/EC of the European Parliament and of the Council of

27 January 2003 on the restriction of the use of certain hazardous

substances in electrical and electronic equipment.

(7) When used herein in relation to memory density, megabit and/or Mb

means 1,024x1,024 = 1,048,576 bits. Usable capacity may be less. For

details, please refer to specifications. SOURCE Toshiba